Bandgap engineering and photodetector applications in Bi(I1-<i>x</i>Br<i>x</i>)3 single crystals

Exploration of low-dimensional semiconductors with tunable band structures is particular interest in the applications nano-electronics and optoelectronics. In this work, Bi(I1−xBrx)3 single crystals have been synthesized by a flux-improved physical vapor transport method, where electronic bandgaps these are effectively modulated concentration halide elements ratios. The first-principle calculations confirm modulation bandgap reveal orbit contributions for conduction minimum valence maximum. properties Bi(I1-xBrx)3-based photodetectors measured, competition mechanism identified, leading to realization best performance sample Br content 0.18. Our results provide route improve BiI3-based achieve controllable response spectra.