Band-gap engineering of ZnO1−xSx films grown by rf magnetron sputtering of ZnS target
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منابع مشابه
Band-gap engineering of ZnO1-xSx films grown by rf magnetron sputtering of ZnS target
Structural and optical properties of ZnO1-хSх (0 ≤ x ≤ 1.0) thin films grown onto sapphire substrates (с-Al2O3) at 300 C by radio frequency (rf) magnetron sputtering of ZnS ceramic target are studied. A possibility of purposeful controlling sulfur content and, as consequence, ZnO1-хSх band gap energy via changing the ratio of the partial pressures of argon and oxygen are revealed. Linear depen...
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The structural and optical properties of nanocrystalline GaN and GaN:H films grown by RF-magnetron sputtering are focused here. The films were grown using a Ga target and a variety of deposition parameters (N2/H2/Arflow rates, RF power, and substrate temperatures). Si (100) and fused silica substrates were used at relatively low temperatures (Ts ≤ 420K). The main effects resulting from the depo...
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Zinc sulfide [ZnS] thin films were deposited on glass substrates using radio frequency magnetron sputtering. The substrate temperature was varied in the range of 100°C to 400°C. The structural and optical properties of ZnS thin films were characterized with X-ray diffraction [XRD], field emission scanning electron microscopy [FESEM], energy dispersive analysis of X-rays and UV-visible transmiss...
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ژورنال
عنوان ژورنال: Vacuum
سال: 2015
ISSN: 0042-207X
DOI: 10.1016/j.vacuum.2015.08.008