Band-Gap Engineering by III-V Infill in Sodalite
نویسندگان
چکیده
منابع مشابه
Towards efficient band structure and effective mass calculations for III-V direct band-gap semiconductors
The band structures and effective masses of III-V semiconductors InP, InAs, InSb, GaAs, and GaSb are calculated using the GW method, the Heyd, Scuseria, and Ernzerhof hybrid functional, and modified BeckeJohnson combined with the local-density approximation MBJLDA —a local potential optimized for the description of the fundamental band gaps F. Tran and P. Blaha, Phys. Rev. Lett. 102, 226401 200...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 1996
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.77.5405