Band engineering of Dirac cones in iron chalcogenides
نویسندگان
چکیده
منابع مشابه
Strain engineering of Dirac cones in graphyne
Articles you may be interested in Engineering of optical polarization based on electronic band structures of A-plane ZnO layers under biaxial strains J.
متن کاملNumerical investigation of the flat band Bloch modes in a 2D photonic crystal with Dirac cones.
A numerical method combining complex-k band calculations and absorbing boundary conditions for Bloch waves is presented. We use this method to study photonic crystals with Dirac cones. We demonstrate that the photonic crystal behaves as a zero-index medium when excited at normal incidence, but that the zero-index behavior is lost at oblique incidence due to excitation of modes on the flat band....
متن کاملDirac Cones in Graphene, Interlayer Interaction in Layered Materials, and the Band Gap in MoS2
The 2D outlook of graphene and similar layers has initiated a number of theoretical considerations of electronic structure that are both interesting and exciting, but applying these ideas to real layered systems, in terms of a model 2D system, must be done with extreme care. In the present review, we will discuss the applicability of the 2D concept with examples of peculiarities of electronic s...
متن کاملManipulation of Dirac Cones in Mechanical Graphene
Recently, quantum Hall state analogs in classical mechanics attract much attention from topological points of view. Topology is not only for mathematicians but also quite useful in a quantum world. Further it even governs the Newton's law of motion. One of the advantages of classical systems over solid state materials is its clear controllability. Here we investigate mechanical graphene, which ...
متن کاملBand Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides.
Atomically thin quasi-2D GaSe flakes are synthesized via van der Waals (vdW) epitaxy on a polar Si (111) surface. The bandgap is continuously tuned from its commonly accepted value at 620 down to the 700 nm range, only attained previously by alloying Te into GaSe (GaSex Te1- x ). This is accomplished by manipulating various vdW epitaxy kinetic factors, which allows the choice bet ween screw-dis...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2020
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.102.054209