Ballistic spin field-effect transistors: Multichannel effects

Ballistic Transport in Spin Field-Effect Transistors Built on Silicon

The spin field-effect transistor (SpinFET) proposed by Datta and Das [1] is composed of ferromagnetic metallic source and drain contacts which sandwich a semiconductor region. Current modulation in the devices is achieved through manipulation of the orientation of the electron spin in the semiconductor channel. We consider the value of the conduction band mismatch between the contacts and the c...

Ballistic Spin Field-Effect Transistors Built on Silicon Fins

Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors

The breathtaking increase of the performance of integrated circuits was made possible by the continuing size miniaturization of semiconductor devices’ feature size. The 32nm MOSFET process technology [1] presently in manufacturing involves a sophisticated heavily strained silicon channel and a high-k dielectric/metal gate stack. Although alternative channel materials with a mobility higher than...

Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins

We investigate the transport properties of ballistic spin field-effect transistors (SpinFET). We show that temperature exerts a significant influence on the device characteristics. For the InAsbased SpinFET an ambient temperature higher than T=150K leads to the absence of the ability to modulate the value of the tunneling magnetoresistance through changing the bandgap mismatch between the chann...

Multichannel field-effect spin barrier selector

The advent of spintronics has resulted in the study and design of spin manipulated devices used as information processors, quantum computing elements, spinpolarized diodes, spin-valve read heads, and electrooptical modulators, to name just a few. The spin-orbit (SO) interaction, due to spatial asymmetry in zincblende lattices or sample design, doping profile or applied gate voltages, plays a fu...