Bakable Metal Ultra-High Vacuum System Using Oil Diffusion Pump
نویسندگان
چکیده
منابع مشابه
Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition.
The scaling of transistors to sub-10 nm dimensions is strongly limited by their contact resistance (RC). Here we present a systematic study of scaling MoS2 devices and contacts with varying electrode metals and controlled deposition conditions, over a wide range of temperatures (80 to 500 K), carrier densities (10(12) to 10(13) cm(-2)), and contact dimensions (20 to 500 nm). We uncover that Au ...
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ژورنال
عنوان ژورنال: SHINKU
سال: 1962
ISSN: 0559-8516,1880-9413
DOI: 10.3131/jvsj.5.279