Auger Recombination in Quantum Well Laser with Participation of Electrons in Waveguide Region
نویسندگان
چکیده
منابع مشابه
Design of a new asymmetric waveguide in InP-Based multi-quantum well laser
Today, electron leakage in InP-based separate confinement laser diode has a serious effect on device performance. Control of electron leakage current is the aim of many studies in semiconductor laser industry. In this study, for the first time, a new asymmetric waveguide structure with n-interlayer for a 1.325 μm InP-based laser diode with InGaAsP multi-quantum well is proposed and theoreticall...
متن کاملAuger Recombination in Quantum - Well InGaAsP Heterostructure Lasers
Interband nonradiative Auger recombination in quantumwell InGaAsP/InP heterostructure lasers has been calculated. It is found that the Auger rate is much reduced in the quasi two-dimensional quantum-well lasers. This suggests that the temperature sensitivity of quantum-well InGaAsP lasers is much less than ordinary structures with much higher values of To at around room temperatures. A CONTINUI...
متن کاملTheoretical study of Auger recombination in a GaInNAs 1.3 mm quantum well laser structure
We present a theoretical study of Auger recombination processes in a GaInNAs/GaAs quantum well structure designed for 1.3 mm laser emission. The calculations are based on a 10310 k"p model, incorporating valence, conduction, and nitrogen-induced bands. The Auger transition matrix elements are calculated explicitly, without introducing any further approximations into the Hamiltonian used. We con...
متن کاملAuger Recombination in Semiconductor Quantum Wells
The principal mechanisms of Auger recombination of nonequilibrium carriers in semiconductor heterostructures with quantum wells are investigated. It is shown for the first time that there exist three fundamentally different Auger recombination mechanisms of (i) thresholdless, (ii) quasi-threshold, and (iii) threshold types. The rate of the thresholdless Auger process depends on temperature only...
متن کاملthe study of aaag repeat polymorphism in promoter of errg gene and its association with the risk of breast cancer in isfahan region
چکیده: سرطان پستان دومین عامل مرگ مرتبط با سرطان در خانم ها است. از آنجا که سرطان پستان یک تومور وابسته به هورمون است، می تواند توسط وضعیت هورمون های استروئیدی شامل استروژن و پروژسترون تنظیم شود. استروژن نقش مهمی در توسعه و پیشرفت سرطان پستان ایفا می کند و تاثیر خود را روی بیان ژن های هدف از طریق گیرنده های استروژن اعمال می کند. اما گروه دیگری از گیرنده های هسته ای به نام گیرنده های مرتبط به ا...
15 صفحه اولذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: REVIEWS ON ADVANCED MATERIALS SCIENCE
سال: 2018
ISSN: 1605-8127
DOI: 10.1515/rams-2018-064