Auger parameter determination of bonding states on thinly oxidized silicon nitride
نویسندگان
چکیده
منابع مشابه
Spontaneous direct bonding of thick silicon nitride
Wafers with 1 μm LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical–mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si–Si hydrophilic bonding. A mechanis...
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ژورنال
عنوان ژورنال: Surface and Interface Analysis
سال: 1998
ISSN: 0142-2421,1096-9918
DOI: 10.1002/(sici)1096-9918(199802)26:2<134::aid-sia356>3.0.co;2-7