Atomistic Structure and its Relaxation Process in Amorphous Silicon Carbide
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چکیده
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Atomistic processes during nanoindentation of amorphous silicon carbide
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ژورنال
عنوان ژورنال: Nihon Kessho Gakkaishi
سال: 2003
ISSN: 0369-4585,1884-5576
DOI: 10.5940/jcrsj.45.185