Atomically Precise Bottom-Up Synthesis of h-BNC: Graphene Doped with h-BN Nanoclusters

Monolayer hexagonal boron–nitrogen–carbon (h-BNC) is considered a prominent candidate for the next generation of semiconductor electronic devices. Nevertheless, experimental evidence h-BNC formation limited, including detailed study its morphological and properties. Here, successful growth from an unexplored single molecular precursor (hexamethyl borazine, C6H18B3N3) using conventional CVD approach on Ir(111) reported. The conformation structure monolayer correlation with local properties are discussed based scanning tunneling microscopy/spectroscopy (STM/STS) X-ray photoelectron spectroscopy (XPS) results. results show that can be described as BN-doped graphene since moiré lattice parameter preserved along alloy. This cluster, renamed h-BN “nanodonuts” according to density exhibited in STM images, have tendency place specific positions within superstructure, it constituted by at least (BN)8 units arranged 6-fold BN rings conformation, evidenced simulation images functional theory (DFT). For concentration about 17%, band gap between 1.4 1.6 eV was determined. versatility novel proven high-quality Rh(111).