Atomic Layer Engineering of Aluminum?Doped Zinc Oxide Films for Efficient and Stable Perovskite Solar Cells
نویسندگان
چکیده
Atomic layer deposition (ALD) has been considered as an efficient method to deposit high quality and uniform thin films of various electron transport materials for perovskite solar cells (PSCs). Here, the effect sequence in ALD process aluminum-doped zinc oxide (AZO) on performance stability PSCs is investigated. Particularly, surface AZO film terminated by diethylzinc (DEZ)/H2O (AZO-1) or trimethylaluminum (TMA)/H2O pulse (AZO-2), investigated with surface-sensitive X-ray photoelectron spectroscopy technique. It observed that AZO-2 significantly enhances thermal upcoming methylammonium lead iodide (MAPbI3) facilitates charge at interface evidenced photoluminescence spectroscopes favorable interfacial band alignment. Finally, planar-type PSC exhibits a champion power conversion efficiency 18.09% negligible hysteresis retains 82% initial after aging 100 h under ambient conditions (relative humidity 40 ± 5%). These results highlight importance atomic engineering developing stable PSCs.
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ژورنال
عنوان ژورنال: Advanced Materials Interfaces
سال: 2022
ISSN: ['2196-7350']
DOI: https://doi.org/10.1002/admi.202200575