Atomic layer deposition of ZnO:Al on PAA substrates

Effect of annealing treatments on CeO2 grown on TiN and Si substrates by atomic layer deposition

In this work, we investigate the effect of thermal treatment on CeO2 films fabricated by using atomic layer deposition (ALD) on titanium nitride (TiN) or on silicon (Si) substrates. In particular, we report on the structural, chemical and morphological properties of 25 nm thick ceria oxide with particular attention to the interface with the substrate. The annealing treatments have been performe...

Atomic Layer Deposition of TiO

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Atomic Layer Deposition of HfO2 Thin Films on Si and GaAs Substrates

The atomic layer deposition of HfO2 thin films is studied on Si(100) and GaAs(100) surfaces. The films are grown using tetrakis(dimethyl)amino hafnium (TDMAH) and H2O precursors at a deposition temperature of 275°C. The Si surfaces used include a H-terminated surface and an OH-rich chemical oxide. GaAs substrates are subjected to two different predeposition treatments involving an HF and a NH4O...

Mechanisms of atomic layer deposition on substrates with ultrahigh aspect ratios.

Atomic layer deposition (ALD) appears to be uniquely suited for coating substrates with ultrahigh aspect ratios (> or similar 10(3)), including nanoporous solids. Here, we study the ALD of Cu and Cu3N on the inner surfaces of low-density nanoporous silica aerogel monoliths. Results show that Cu depth profiles in nanoporous monoliths are limited not only by Knudsen diffusion of heavier precursor...

Atomic layer deposition: an overview.