Atomic layer deposition of GaN at low temperatures

Atomic layer deposition of GaN using GaCl3 and NH3

GaN films were grown on Si 100 substrate by atomic layer deposition ALD using GaCl3 and NH3. Growth conditions were identified for which the growth rate exhibited a plateau at 2.0 Å /cycle, consistent with self-limiting adsorption. A relatively wide temperature window 500–750 °C for ALD growth mode was also established for one flow sequence schedule. In this limit, both the 0002 and 101̄1 orient...

Low Temperature Atomic Layer Deposition of Tin Oxide

Atomic layer deposition (ALD) of tin oxide (SnOx) films was achieved using a newly synthesized tin precursor and hydrogen peroxide. We obtained highly pure, conductive SnOx films at temperatures as low as 50 C, which was possible because of high chemical reactivity between the new Sn precursor and hydrogen peroxide. The growth per cycle is around 0.18 nm/cycle in the ALDwindow up to 150 C, and ...

Atomic Layer Deposition of TiO

Additional resources and features associated with this article are available within the HTML version: • Supporting Information • Links to the 4 articles that cite this article, as of the time of this article download • Access to high resolution figures • Links to articles and content related to this article • Copyright permission to reproduce figures and/or text from this article High surface a...

Atomic layer deposition: an overview.

GaN nanowire functionalized with atomic layer deposition techniques for enhanced immobilization of biomolecules.

We report the use of atomic layer deposition (ALD) coating as a nanobiosensor functionalization strategy for enhanced surface immobilization that may enable higher detection sensitivity. Three kinds of ALD coating films, Al(2)O(3), TiO(2), and SiO(2), were grown on the gallium nitride nanowire (GaN NW) surfaces and characterized with high-resolution transmission electron microscopy (HRTEM) and ...