Atomic layer deposition (ALD) on inorganic or polymeric membranes
نویسندگان
چکیده
منابع مشابه
Atomic layer deposition (ALD): from precursors to thin film structures
The principles of the atomic layer deposition (ALD) method are presented emphasizing the importance of precursor and surface chemistry. With a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps. Selected recent ALD processes developed for films used in microelectronics are described as examples. These include depositio...
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Aalto University, P.O. Box 11000, FI-00076 Aalto www.aalto.fi Author Pia Sundberg Name of the doctoral dissertation Atomic/molecular layer deposition of hybrid inorganic-organic thin films Publisher School of Chemical Technology Unit Department of Chemistry Series Aalto University publication series DOCTORAL DISSERTATIONS 201/2014 Field of research Inorganic Chemistry Manuscript submitted 11 Se...
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Discrete, differently shaped, tailorable, and functional nanoscale building blocks based on a variety of materials are expected to be useful in future engineering at the nanometer scale, and require facile techniques for their design, preparation, tailoring, and manipulation. As prototypical architectures, hollow nanospheres and -tubes with tunable diameters and wall thicknesses could be of con...
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Given the high stability of amidines, they have long been considered good choices as bidentate ligands in organometallic compounds. Early uses of metal amidinates have been reported in catalysis to promote polymerizations and other related reactions. 3 More recently, metal amidinates have been developed as promising precursors for the deposition of solid thin films. 8 They have proven particula...
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High-performance pentacene field-effect transistors have been fabricated using Al2O3 as a gate dielectric material grown by atomic layer deposition (ALD). Hole mobility values of 1.5 ± 0.2 cm/V s and 0.9 ± 0.1 cm/V s were obtained when using heavily n-doped silicon (n-Si) and ITO-coated glass as gate electrodes, respectively. These transistors were operated in enhancement mode with a zero turn-...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2019
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.5103212