Applications of Field-Effect Transistor (FET)-Type Biosensors
نویسندگان
چکیده
منابع مشابه
One-dimensional Nanomaterials for Field Effect Transistor (FET) Type Biosensor Applications
Copyright 2012 KIEEME. All rights reserved. This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted noncommercial use, distribution, and reproduction in any medium, provided the original work is properly cited. pISSN: 1229-7607 eISSN: 2092-7592 DOI: http://dx...
متن کاملCarbon nanomaterials field-effect-transistor-based biosensors
Carbon nanomaterials field-effect transistor (FET)-based electrical biosensors provide significant advantages over the current gold standards, holding great potential for realizing direct, label-free, real-time electrical detection of biomolecules in a multiplexed manner with ultrahigh sensitivity and excellent selectivity. The feasibility of integrating them with current complementary metal ox...
متن کاملMoS₂ field-effect transistor for next-generation label-free biosensors.
Biosensors based on field-effect transistors (FETs) have attracted much attention, as they offer rapid, inexpensive, and label-free detection. While the low sensitivity of FET biosensors based on bulk 3D structures has been overcome by using 1D structures (nanotubes/nanowires), the latter face severe fabrication challenges, impairing their practical applications. In this paper, we introduce and...
متن کاملTop-down nanofabrication of silicon nanoribbon field effect transistor (Si-NR FET) for carcinoembryonic antigen detection
Sensitive and quantitative detection of tumor markers is highly required in the clinic for cancer diagnosis and consequent treatment. A field-effect transistor-based (FET-based) nanobiosensor emerges with characteristics of being label-free, real-time, having high sensitivity, and providing direct electrical readout for detection of biomarkers. In this paper, a top-down approach is proposed and...
متن کاملA novel 3D embedded gate field effect transistor – Screen-grid FET – Device concept and modelling
A novel 3D field effect transistor on SOI – screen-grid FET (SGrFET) – is proposed and an analysis of its DC behaviour is presented by means of 2D TCAD analysis. The novel feature of the SGrFET is the design of 3D insulated gate cylinders embedded in the SOI body. This novel gate topology improves efficiency and allows great flexibility in device and gate geometry to optimize DC performance. Th...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Science and Convergence Technology
سال: 2014
ISSN: 2288-6559
DOI: 10.5757/asct.2014.23.2.61