Application of Atom Probe Tomography to Nitride Semiconductors
نویسندگان
چکیده
منابع مشابه
Application of Atom Probe Tomography to Nitride Semiconductors
A decade ago, atom probe tomography (APT) was applied almost exclusively to the study of metals, since the study of materials with lower conductivities, such as semiconductors, was considered pragmatically to be very difficult. The advent of commercially-available laser-pulsed APT systems has since enabled the increasingly widespread application of APT to semiconductors, with particularly notab...
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The role of laser assisted atom probe tomography (APT) in microelectronics is discussed on the basis of various illustrations related to SiGe epitaxial layers, bipolar transistors or MOS nano-devices including gate all around (GAA) devices that were carried out at the Groupe de Physique des Matériaux of Rouen (France). 3D maps as provided by APT reveal the atomic-scale distribution of dopants a...
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1. Groupe de Physique des Matériaux, UMR 6634 CNRS, University and INSA of Rouen, Normandie University, 76800 St. Etienne du Rouvray, France 2. Institute of Physics (IPhys), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland 3. Laboratoire de Photonique et Nanostructures CNRS, Université Paris-Saclay, 91460 Marcoussis, France. 4. Institut d’Electronique Fondamentale...
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Various practical issues affecting atom probe tomography (APT) analysis of III-nitride semiconductors have been studied as part of an investigation using a c-plane InAlN/GaN heterostructure. Specimen preparation was undertaken using a focused ion beam microscope with a mono-isotopic Ga source. This enabled the unambiguous observation of implantation damage induced by sample preparation. In the ...
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2017
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927617003993