Antimony fluoride ( <scp> SbF ₃ </scp> ): A potent hole suppressor for tin( <scp>II</scp> )?halide perovskite devices

Tin (Sn2+)-based halide perovskites have been developed as the most promising alternatives to their toxic Pb-based counterparts in optoelectronic devices. However, facile tin vacancy formation and easy oxidization characteristics make Sn2+-based highly p-doped with excessive hole concentrations, which significantly hinder applications. Herein, we demonstrate a potent inhibitor of antimony fluoride (SbF3), possesses higher hole-suppression capability than conventional (SnF2). A small amount SbF3 allows wide range hole-density modulation no or less SnF2 addition, thus mitigating negative effects using only SnF2. SnF2/SbF3 co-additive approach was further achieve high-performance Sn2+ perovskite thin-film transistors operated enhancement mode five-fold field-effect mobility improved operational stability compared We expect that suppressor can provide opportunities for development high-efficiency Sn2+-perovskite