Anomalous spin Hall effects in Dresselhaus (110) quantum wells

Anomalous spin Hall effects in Dresselhaus (110) quantum wells

Anomalous spin Hall effects that belong to the intrinsic type in Dresselhaus (110) quantum wells are discussed. For the out-of-plane spin component, antisymmetric current-induced spin polarization induces opposite spin Hall accumulation, even though there is no spin-orbit force due to Dresselhaus (110) coupling. A surprising feature of this spin Hall induction is that the spin accumulation sign...

Spin relaxation in GaAs(110) quantum wells

Quantum anomalous hall effect in Hg1-yMnyTe quantum wells.

The quantum Hall effect is usually observed when a two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum anomalous Hall effect, can be realized in Hg{1-y}Mn{y}Te quantum wells, without an external magnetic field and the associated Landau levels. This effect arises purel...

Quantum spin hall insulator state in HgTe quantum wells.

Recent theory predicted that the quantum spin Hall effect, a fundamentally new quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We fabricated such sample structures with low density and high mobility in which we could tune, through an external gate voltage, the carrier conduction from n-type to p-type, passing through an insul...

Symmetry and spin dephasing in (110)-grown quantum wells.

Symmetry and spin dephasing in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect and time-resolved Kerr rotation. We show that magnetic field induced photogalvanic effect provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying ...