Anomalous precipitation hardening in Al-(1 wt%)Cu thin films

Precipitation hardening in dilute Al–Zr alloys

The aim of this study was to investigate the effect of solute content (hipoperitectic Al–0.22 wt.%Zr and hiperperitectic Al–0.32 wt.%Zr) on the precipitation hardening and microstructural evolution of dilute Al–Zr alloys isothermally aged. The materials were conventionally cast in a muffle furnace, solidified in a water-cooled Cu mold and subsequently heat-treated at the temperature of 650 K (3...

Precipitation Hardening of Al–Si–Mg Alloys

Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films

We present a comprehensive study of the optical characteristics of (Al, In)GaN epilayers measured by photoluminescence (PL), integrated PL intensity, and timeresolved PL spectroscopy. For not only InGaN, but also AlGaN epilayers with large Al content, we observed an anomalous PL temperature dependence: (i) an “S-shaped” PL peak energy shift (decrease-increase-decrease) and (ii) an “inverted S-s...

Al Doped ZnO Thin Films; Preparation and Characterization

ZnO is a promising material suitable for variety of novel electronic applications including sensors, transistors, and solar cells. Intrinsic ZnO film has inferiority in terms of electronic properties, which has prompted researches and investigations on doped ZnO films in order to improve its electronic properties. In this work, aluminum (Al) doped ZnO (AZO) with various concentrations and undop...

Enhanced anomalous Hall effect in Fe nanocluster assembled thin films.

An enhanced anomalous Hall effect is observed in heterogeneous uniform Fe cluster assembled films with different film thicknesses (ta = 160-1200 nm) fabricated by a plasma-gas-condensation method. The anomalous Hall coefficient (Rs) at ta = 1200 nm reaches its maximum of 2.4 × 10(-8) Ω cm G(-1) at 300 K, which is almost four orders of magnitude larger than bulk Fe. The saturated Hall resistivit...