Analysis of polarization-dependent photoreflectance studies forc-plane GaN films grown ona-plane sapphire

Investigations of HVPE grown Nonpolar a-plane GaN on Slightly Misoriented r-plane Sapphire Substrates

We have investigated the growth of nonpolar GaN templates by hydride vapor phase epitaxy (HVPE). This includes a systematic study of misoriented r-plane sapphire wafers with a miscut angle up to ±1◦ towards the c-axis of the crystal as starting substrates. Starting with an AlN nucleation layer approximately 3.3μm of nonpolar a-plane GaN are grown by metalorganic vapor phase epitaxy (MOVPE). The...

Optical and structural studies of homoepitaxially grown m-plane GaN

Structural characterization of non-polar (112 0) and semi-polar (1126) GaN films grown on r-plane sapphire

Thick GaN films, with (1120) or (1126) planes parallel to the r-plane of sapphire, were grown by molecular beam epitaxy using AlN or GaN buffer layers. Characterization by transmission electron microscopy revealed a high density of basal-plane stacking faults (BSFs) in the (1120) non-polar GaN (a-GaN) films. {1120} and {1010} prismatic-plane and {1102} pyramidal-plane stacking faults (SFs) doma...

Separation of Structural Defects in MOCVD Grown GaN and AlN Films on c-Plane Sapphire by HRXRD

A novel triple-axis diffractometer equipped with a parabolically curved graded multilayer, which replaces the conventional analyzer crystal, is used to characterize structural properties of epitaxial GaN and AlN films grown on c-plane sapphire. From the angular broadening of the symmetric rocking curves, the lateral correlation length and the tilt angle is obtained by two independent methods. A...

The determining factor of a preferred orientation of GaN domains grown on m-plane sapphire substrates

Epitaxial lateral overgrowth in tandem with the first-principles calculation was employed to investigate the determining factor of a preferred orientation of GaN on SiO2-patterned m-plane sapphire substrates. We found that the (1100)-orientation is favored over the (1103)-orientation in the region with a small filling factor of SiO2, while the latter orientation becomes preferred in the region ...