Analysis and Design of a Fully-Integrated High-Power Differential CMOS T/R Switch and Power Amplifier Using Multi-Section Impedance Transformation Technique

نویسندگان

چکیده

In this paper, a new topology for high-power single-pole-double-throw (SPDT) antenna switch is presented, and its loss mechanisms are fully analyzed. The differential architecture employed in the proposed implementation to prevent unwanted channel formations of OFF-state Rx transistors by relieving voltage swing over devices. addition that, load impedance seen Tx stepped down reduce even more, allowing handle signal without distortions. To drop operating impedance, two matching networks required at input output switch, respectively, they carefully implemented considering integration issue front-end circuitries. From analysis whole path, an optimum decided view trade-off between power handling capability insertion switch. design compared conventional with electromagnetic (EM) simulated transformer inductors. standard 0.18 µm CMOS process, all devices adopt deep n-well structure. measured performance transmitter chain shows 1 dB compression point (P1dB) 32.1 dBm 38.3% power-added efficiency (PAE) 1.9 GHz.

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ژورنال

عنوان ژورنال: Electronics

سال: 2021

ISSN: ['2079-9292']

DOI: https://doi.org/10.3390/electronics10091028