An insight to current collapse in GaN HEMT and suppressing techniques

GaN HEMT reliability

0026-2714/$ see front matter 2009 Elsevier Ltd. A doi:10.1016/j.microrel.2009.07.003 * Corresponding author. Tel.: +1 617 253 4764; fax E-mail address: [email protected] (J.A. del Alamo). This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that el...

Modelling Reliability in GaN HEMT Devices

In this paper a study of the evolution over time of four different magnitudes in GaN HEMT’s will be presented. The experimental data measured at III-V Lab’s, as a result of a Life Test performed using as test vehicles six different GaN HEMT devices, allow the authors to find a way of modelling reliability by using specific mathematical functions developed to simulate the temporal dependence of ...

Outlook for GaN HEMT Technology

It is expected that the high electron mobility transistor (HEMT) using gallium nitride (GaN) as its wide band gap semiconductor will be applied in diverse, green ICT systems because of its high efficiency. The GaN HEMT utilizes high-density two-dimensional electron gas (2DEG) accumulated in the boundary layer between GaN and AlGaN through their piezoelectric effect and natural polarization effe...

GaN HEMT and MMIC Design and Evaluation

Novel GIT Structure Solves Current Collapse In GaN Power HEMTs

The advantage of GaN power devices in terms of performance is no longer hype but a reality that has empowered many power supply designers to build new applications that are more efficient, compact and able to operate in harsher environmental conditions. With a projected market size of U.S. $600 million in 2020 and a CAGR of 80% to 2020, many new players have entered the field and are introducin...