An Improved 4H-SiC MESFET with a Partially Low Doped Channel

Observation of glassy ferromagnetism in Al-doped 4H-SiC.

Glassy ferromagnetism is observed in diluted magnetic semiconductor Al-doped 4H-SiC. We propose a possible explanation for the origin of ferromagnetism order that is the coeffect of sp(2)/sp(3) configuration along with the structural defects. This result unambiguously demonstrates the existence of intrinsic ferromagnetism order in nonmagnetic sp systems.

A novel SiC MESFET with recessed P-Buffer layer

We report, for the first time, a silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) which has a recessed p-buffer layer into the channel region near the source and a recessed channel into the p-buffer layer region near the drain under the gate. The length and thickness of the channel recess into the p-buffer layer are larger than the pbuffer recess into the channel...

Conductance Deep-Level Transient Spectroscopic Study of 4H-SiC MESFET and Traps

Systematic analysis of the high- and low-field channel mobility in lateral 4H-SiC MOSFETs

In this work, we investigate the impact of Al-implantation into n-MOSFET channel regions together with its p-doping concentration upon the mobility limiting scattering mechanisms in the channel. For this purpose, a study of the interface trap density, interface trapped charge density, field-effect mobility, and Hall mobility is carried out for normally-off n-MOSFETs with different doping profil...

Failure analysis of ESD-stressed SiC MESFET

a CNRS, LAAS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France b Univ de Toulouse, UPS, LAAS, F-31400 Toulouse, France c Université de Lyon, CNRS, Laboratoire AMPERE, UMR 5005, INSA de Lyon, F-69621 Villeurbanne, France d Institut de Microelectrónica de Barcelona-Centre Nacional de Microelectrónica (IMB-CNM), Consejo Superior de Investigaciones Científicas (CSIC), Universitat Autònoma de Bar...