An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics

Effect of Surface Defect States on Valence Band and Charge Separation and Transfer Efficiency

Both energy band and charge separation and transfer are the crucial affecting factor for a photochemical reaction. Herein, the BiOCl nanosheets without and with surface bismuth vacancy (BOC, V-BOC) are prepared by a simple hydrothermal method. It is found that the new surface defect states caused by bismuth vacancy have greatly up-shifted the valence band and efficiently enhanced the separation...

Valence-Band Ordering in ZnO

VALENCE BAND STRUCTURE OF PbTe

This paper is a review article covering our work in recent years on PbTe and the alloy semiconductor CdXPbl-,Te. It shows how measurements of the transport and optical properties of these materials support (1) the two valence band model for PbTe in which the principal light mass band is highly non-parabolic and the secondary heavy mass band is parabolic and (2) a value for the Hall-anisotropy f...

Valence band structure of BaCuSF and BaCuSeF

The origin of high hole conduction in BaCuQF Q=S,Se was investigated by photoemission measurements and full-potential linearized augmented plane wave band-structure calculations. In both compounds, the large dispersion near the top of the valence band is realized by admixed states of Cu 3d and S 3p or Se 4p orbitals, indicating that high hole mobility is possible. In addition, the valence band ...

Novel Defect Terminolgy Beside Evaluation And Design Fault Tolerant Logic Gates In Quantum-Dot Cellular Automata

Quantum dot Cellular Automata (QCA) is one of the important nano-level technologies for implementation of both combinational and sequential systems. QCA have the potential to achieve low power dissipation and operate high speed at THZ frequencies. However large probability of occurrence fabrication defects in QCA, is a fundamental challenge to use this emerging technology. Because of these vari...