Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS₂: Implications for 2D Electronic Devices

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have demonstrated a very strong application potential. In order to realize it, the synthesis of stoichiometric 2D TMDCs on large scale is crucial. Here, we consider typical TMDC representative, MoS2, and present an approach for fabrication well-ordered crystalline films via crystallization thin amorphous layer by annealing at 800 °C, which was investigated in terms long-range short-range orders. Strong preferential crystal growth layered MoS2 along ⟨002⟩ crystallographic plane from as-deposited 3D phase discussed together with mechanism process disclosed molecular dynamic simulations using Vienna Ab initio Simulation Package. We believe that obtained results may be generalized other materials. The proposed demonstrates simple efficient way fabricate applications nano- optoelectronic devices.