Amorphous silicon passivated contacts for diffused junction silicon solar cells
نویسندگان
چکیده
منابع مشابه
Amorphous silicon passivated contacts for diffused junction silicon solar cells
Articles you may be interested in Compositional study of defects in microcrystalline silicon solar cells using spectral decomposition in the scanning transmission electron microscope Appl. Influence of back contact roughness on light trapping and plasmonic losses of randomly textured amorphous silicon thin film solar cells Appl. Photocurrent increase in n-i-p thin film silicon solar cells by gu...
متن کاملDegradation of oxide-passivated boron-diffused silicon
Recombination in oxide-passivated boron-diffused silicon is found to increase severely at room temperature. The degradation reaction leads to a 45 fold increase in emitter recombination that saturates in 120 days, irrespective of whether the samples received a forming-gas anneal. The degradation was also examined for diffusions stored at 50, 75, and 100 °C. The results indicate that the degrada...
متن کاملAmorphous Silicon–based Solar Cells
Crystalline semiconductors are very well known, including silicon (the basis of the integrated circuits used in modern electronics), Ge (the material of the first transistor), GaAs and the other III-V compounds (the basis for many light emitters), and CdS (often used as a light sensor). In crystals, the atoms are arranged in near-perfect, regular arrays or lattices. Of course, the lattice must ...
متن کاملAmorphous silicon and silicon germanium materials for high-e$ciency triple-junction solar cells
In this paper, we report our recent progress in the amorphous silicon (a-Si)-based photovoltaic research program at The University of Toledo (UT). We have achieved the fabrication of (1) wide bandgap a-Si solar cells with an open-circuit voltage of 0.981 and a "ll factor of 0.728 using high hydrogen dilution for the i-layer deposition, (2) mid bandgap a-SiGe solar cells having an open-circuit v...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2014
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4872262