AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amo...

Observation of layer by layer graphitization of 4H-SiC, through atomic-EELS at low energy

Graphitization of SiC, is attracting particular research interest since it is a very promising way to produce uniform graphene films over large areas. Graphene is a planar one-atom-thick layer of sp2bonded carbon atoms with remarkable electronic transport properties that make it a potential candidate for future electronic applications. However, graphene presents specific structural and electron...

Low Temperature Atomic Layer Deposition of Tin Oxide

Atomic layer deposition (ALD) of tin oxide (SnOx) films was achieved using a newly synthesized tin precursor and hydrogen peroxide. We obtained highly pure, conductive SnOx films at temperatures as low as 50 C, which was possible because of high chemical reactivity between the new Sn precursor and hydrogen peroxide. The growth per cycle is around 0.18 nm/cycle in the ALDwindow up to 150 C, and ...

Atomic layer deposition: an overview.

Atomic Layer Deposition of TiO

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