Alcohol-Based Digital Etch for III–V Vertical Nanowires With Sub-10 nm Diameter
نویسندگان
چکیده
منابع مشابه
Towards Sub-10 nm Diameter III-V Vertical Nanowire Transistors
Towards the demonstration of sub-10 nm III-V vertical fin and nanowire MOSFETs, a novel alcohol-based digital-etch technology has been developed. The new technique minimizes the mechanical forces exerted on vertical nanowire structures. A consistent 1 nm/cycle etching rate on both InGaAs and InGaSb-based heterostructures has been obtained. This is the first demonstration of digital etch on anti...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2017
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2017.2690598