Термоэлектрические свойства твердых растворов Ag-=SUB=-8-=/SUB=-Ge-=SUB=-1-x-=/SUB=-Mn-=SUB=-x-=/SUB=-Te-=SUB=-6-=/SUB=-

نویسندگان

چکیده

Abstract. Ag8Ge1-xMnxTe6 solid solutions with different manganese content (x = 0; 0.05; 0.1; 0.2) were prepared by alloying and further pressing the powders under a pressure of 0.6 GPa. By X-ray diffraction studies have shown that introduction atoms leads to compressibility lattice. All p-type samples had high resistance below transition at temperatures 180 - 220 K. An increase in electrical conductivity range 300 K was analyzed using Mott ratio; T > 320 K, semiconductor behavior is observed all compositions. The highest thermoelectric figure merit ZT 0.7 550 obtained for solution composition (х 0.05).

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Toward the Ultimate Limit of Phase Change in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>

The limit to which the phase change memory material Ge2Sb2Te5 can be scaled toward the smallest possible memory cell is investigated using structural and optical methodologies. The encapsulation material surrounding the Ge2Sb2Te5 has an increasingly dominant effect on the material’s ability to change phase, and a profound increase in the crystallization temperature is observed when the Ge2Sb2Te...

متن کامل

Ambipolar field effect in the ternary topological insulator (Bi<sub><i>x</i></sub>Sb<sub>1-<i>x</i></sub>)<sub>2</sub>Te<sub>3</sub> by composition tuning

Topological insulators exhibit a bulk energy gap and spin-polarized surface states that lead to unique electronic properties1–9, with potential applications in spintronics and quantum information processing. However, transport measurements have typically been dominated by residual bulk charge carriers originating from crystal defects or environmental doping10–12, and these mask the contribution...

متن کامل

A non-vacuum process for preparing nanocrystalline CuIn<sub>1−x</sub>Ga<sub>x</sub>Se<sub>2</sub> materials involving an open-air solvothermal reaction

A non-vacuum, two-step process has been used to prepare a series of nanocrystalline CuIn1−xGaxSe2 (x = 0, 0.25, 0.5, 0.75, 1) materials. An open-air solvothermal preparation in triethylenetetramine solvent was followed by annealing at 500 °C in a nitrogen atmosphere for 20 min. All materials have mixed clustered plate, spherical particle, and nanorod morphologies with the smallest particle diam...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Fizika i tehnika poluprovodnikov

سال: 2022

ISSN: ['0015-3222', '1726-7315']

DOI: https://doi.org/10.21883/ftp.2022.09.53406.9760