Advances in wide bandgap technology
نویسندگان
چکیده
منابع مشابه
Wide Bandgap GaN Smart Power Chip Technology
Smart power chip technology has been realized on the GaN-on-Si platform, featuring monolithically integrated power devices, digital and analog functional blocks. In particular, this paper presents the imperative analog functional block – the voltage reference generator for smart power applications with wide-temperature-range stability. These circuits are shown to be capable of proper functions ...
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Existing semiconductor electronic and photonic devices utilize the charge on electrons and holes in order to perform their specific functionality such as signal processing or light emission. The relatively new field of semiconductor spintronics seeks, in addition, to exploit the spin of charge carriers in new generations of transistors, lasers and integrated magnetic sensors. The ability to con...
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High-K ceramics are embedded into a polymer host to create an electromagnetic bandgap (EBG) substrate that possess superior properties to previous bandgap implementations in terms of stopband width, attenuation per layer, and practicality. Ceramics are periodically spaced in a commercially-available, Teflon-based host to create a bandgap that spans from 12.1 to 24.1 GHz. Miniature dielectric ro...
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Electrospinning is a simple and versatile technique that relies on the electrostatic repulsion between surface charges to continuously draw nanofibers from a viscoelastic fluid. Electrospinning can generate nanofibers with a number of secondary structures. Surface and/or interior of nanofibers can be functionalized with molecular species or nanoparticles during or after an electrospinning proce...
متن کاملWide Bandgap Heterojunctions on Crystalline Silicon
We describe the use of organic and metal oxide semiconductors to form wide-bandgap heterojunctions to crystalline silicon. We use these semiconductors to demonstrate a heterojunction which both blocks electrons and passes holes, and a complementary heterojunction which blocks holes and passes electrons and blocks holes. The carrier transport functions are demonstrated through simple device stru...
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ژورنال
عنوان ژورنال: III-Vs Review
سال: 2002
ISSN: 0961-1290
DOI: 10.1016/s0961-1290(02)85134-1