Adhesion of Diazoquinone–Novolac Photoresist Films Implanted with Boron and Phosphorus Ions to Single-Crystal Silicon
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منابع مشابه
Distributions of Boron and Phosphorus Implanted in Silicon in the Energy Range
Boron and phosphorus were implanted in p-type and n-type silicon wafers in the energy range from 0.1 to 1.5 MeV. Three different methods were used to determine the distribution of the ions: SIMS, CV and NRA. The results were fitted to a Pearson IV distribution in order to extract moments for describing the distributions analytically. The projected ranges agree well with the theoretical values. ...
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ژورنال
عنوان ژورنال: High Energy Chemistry
سال: 2020
ISSN: 0018-1439,1608-3148
DOI: 10.1134/s0018143920010129