Active topological photonics

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Topological photonics

821 Frequency, wavevector, polarization and phase are degrees of freedom that are often used to describe a photonic system. Over the past few years, topology — a property of a photonic material that characterizes the quantized global behaviour of the wavefunctions on its entire dispersion band — has emerged as another indispensable degree of freedom, thus opening a path towards the discovery of...

متن کامل

Topological photonics Citation

The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters.

متن کامل

Topological orders in Silicon photonics

Topological features – global properties which are not discernible locally – have attracted tremendous research attention in many fields of physics, ranging from condensed matter to ultra cold gases. Recently, photonic systems have been under investigation to explore various types of topological orders and to potentially develop robust optical devices. In this project, we investigated various a...

متن کامل

Imaging topological edge states in silicon photonics

Topological features—global properties not discernible locally—emerge in systems ranging from liquid crystals to magnets to fractional quantum Hall systems. A deeper understanding of the role of topology in physics has led to a new class of matter—topologically ordered systems. The best known examples are quantum Hall effects, where insensitivity to local properties manifests itself as conducta...

متن کامل

Monolithically Integrated Ge-on-Si Active Photonics

Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Nanophotonics

سال: 2020

ISSN: 2192-8614

DOI: 10.1515/nanoph-2019-0376