Achieving Uniform Carrier Distribution in MBE-Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs

Stimulated Emission from the MBE Grown Homoepitaxial InGaN Based Multiple Quantum Wells Structures

V.Yu. Ivanov, M. Godlewski, S. Miasojedovas, S. Juršėnas, K. Kazlauskas, A. Žukauskas, C. Skierbiszewski, M. Siekacz, M. Leszczyński, P. Perlin, T. Suski and I. Grzegory Institute of Physics, Polish Academy of Sciences al. Lotników 32/46, 02-668 Warsaw, Poland Institute of Materials Science and Applied Research, Vilnius University Saulėtekio al. 9, Building III, 10222 Vilnius, Lithuania High Pr...

Finite element simulations of compositionally graded InGaN solar cells

The solar power conversion efficiency of compositionally graded InxGa1 xN solar cells was simulated using a finite element approach. Incorporating a compositionally graded region on the InGaN side of a p-GaN/n-InxGa1 xN heterojunction removes a barrier for hole transport into GaN and increases the cell efficiency. The design also avoids many of the problems found to date in homojunction cells a...

INFLUENCE OF Si-DOPING ON CARRIER LOCALIZATION OF MOCVD-GROWN InGaN/GaN MULTIPLE QUANTUM WELLS

We have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MQWs were grown on 1.8-μm-thick GaN layers on c-plane sapphire fil...

Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency

Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers.

We demonstrate the high efficiency of InGaN/GaN multiple quantum wells (MQWs) light-emitting diode (LED) grown on the electrochemically etched nanoporous (NP) GaN. The photoluminescence (PL) and Raman spectra show that the LEDs with NP GaN have a strong carrier localization effect resulting from the relaxed strain and reduced defect density in MQWs. Also, the finite-difference time-domain (FDTD...