A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation
نویسندگان
چکیده
منابع مشابه
A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation
Oxygen-doped germanium telluride phase change materials are proposed for high temperature applications. Up to 8 at.% oxygen is readily incorporated into GeTe, causing an increased crystallisation temperature and activation energy. The rhombohedral structure of the GeTe crystal is preserved in the oxygen doped films. For higher oxygen concentrations the material is found to phase separate into G...
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Phase-change memory technology relies on the electrical and optical properties of certain materials changing substantially when the atomic structure of the material is altered by heating or some other excitation process. For example, switching the composite Ge(2)Sb(2)Te(5) (GST) alloy from its covalently bonded amorphous phase to its resonantly bonded metastable cubic crystalline phase decrease...
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Structural fingerprints of electronic change in the phase-change-material: Ge2Sb2Te5
In this paper, we generate a-Ge2Sb2Te5 models via ab initio molecular dynamic simulations, track the dynamic changes of network at 500 K, and correlate the structural changes in the course of the simulation with changes in electronic structure. Considerable fluctuations of the electronic gap are observed even for a model in equilibrium. We compare our study to experiments and other simulations....
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2015
ISSN: 2045-2322
DOI: 10.1038/srep11150