A self-aligned Ga2O3 heterojunction barrier Schottky power diode

We report an alignment-free gallium oxide (Ga2O3) heterojunction barrier Schottky (HJBS) power diode, which utilizes the self-assembled Ni nanostructures as in situ masks for trench etching of Ga2O3 and subsequent selective-area filling p-type NiO. By increasing depth to 200 nm, relevant HJBS diode exhibits improved reverse blocking capabilities including reduced leakage current density 10−8 A/cm2 (at a bias 100 V) enhanced breakdown voltage 748 V, while maintaining forward biasing characteristics similar (SBD). The variation turn-on features indicate conversion diodes from Ni/Ga2O3 SBD NiO/Ga2O3 p-n diode. electrical field simulations experimental facts imply that remarkable lateral pinch-off effect 200-nm trenched shields electric depletion region underneath contact. This work provides straightforward strategy simplify fabrication process Ga2O3-based with both promising performances.