A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses

Herein, physical reservoir computing with a redox‐based ion‐gating (redox‐IGR) comprising Li x WO 3 thin film and lithium‐ion conducting glass ceramic (LICGC) is demonstrated. The subject redox‐IGR successfully solves second‐order nonlinear dynamic equation by utilizing voltage pulse driven in channel to enable computing. Under the normal conditions, which only drain current ( I D ) used for states, lowest prediction error 8.15 × 10 −4 . Performance enhanced addition of G resulting significant lowering 5.39 , noticeably lower than other types reservoirs (memristors spin torque oscillators) reported date. A autoregressive moving average (NARMA2) task, typical benchmark computing, also performed IGR good performance achieved, normalized mean square (NMSE) 0.163. short‐term memory task investigate an enhancement mechanism from addition. An increase capacity, 2.35 without 3.57 observed forgetting curves, indicating that both high dimensionality capacity attributed origin improvement.