A physics-based model of threshold voltage for amorphous oxide semiconductor thin-film transistors
نویسندگان
چکیده
منابع مشابه
Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors
The dielectric properties of ZrO2–Al2O3 nanolaminates, deposited via atomic layer deposition, and their impact on the performance and stability of indium gallium zinc oxide and zinc tin oxide amorphous oxide semiconductor thin-film transistors TFTs are investigated. It is found that nanolaminate dielectrics can combine the advantages of constituent dielectrics and produce TFTs with improved per...
متن کاملModeling Bias Stress Effect on Threshold Voltage for Amorphous Silicon Thin-Film Transistors and Circuits
In this paper, we study amorphous silicon thin-lmtransistor (TFT) degradation under bias stress effect. To model threshold voltage shift with bias stress effect, fabricated samples are measured for I-V data with bias stress in variations of temperature. Rensselaer Polytechnic Institute (RPI) model is thus adopted to extract model parameters, such as the flat band voltage (VFB), the characteris...
متن کاملMetal oxide semiconductor thin-film transistors for flexible electronics
Luisa Petti, Niko Münzenrieder, 2 Christian Vogt, Hendrik Faber, Lars Büthe, Giuseppe Cantarella, Francesca Bottacchi, Thomas D. Anthopoulos, and Gerhard Tröster Electronics Laboratory, Swiss Federal Institute of Technology, Zürich, Switzerland Sensor Technology Research Centre, University of Sussex, Falmer, United Kingdom Department of Physics and Centre for Plastic Electronics, Imperial Colle...
متن کاملThreshold Voltage Instability and Relaxation in Hydrogenated Amorphous Silicon Thin Film Transistors
I hereby declare that I am the sole author of this thesis. This is a true copy of the thesis, including any required final revisions, as accepted by my examiners. I understand that my thesis may be made electronically available to the public. Abstract This thesis presents a study of the bias-induced threshold voltage metastability phenomenon of the hydrogenated amorphous silicon (a-Si:H) thin f...
متن کاملAtomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors
Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition. The films maintained their amorphous character up to temperatures over 500 C. The highest field effect mobility was 13 cm/V s with on-to-off ratios of drain current 10–10. The lowest subthreshold swing of 0.27 V/decade was observed with thermal oxide as a gate insulator. The channel l...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: AIP Advances
سال: 2016
ISSN: 2158-3226
DOI: 10.1063/1.4945410