A Physic-Based Explicit Compact Model for Reconfigurable Field-Effect Transistor

In this paper, a compact model for the double-gate Reconfigurable Field-Effect Transistor (RFET) is presented. Firstly, physics-based surface potential derived by solving Poisson's equation at different channel regions. Then an explicit expression of drain current analytically obtained based on theory band-to-band tunneling Schottky junction. The proposed shows excellent agreement with TCAD simulations which have been calibrated experimental data. Finally, compactible implemented in Verilog-A language without convergence problem, and proven RFET-based logic circuit.