A Novel ON-State Resistance Modeling Technique for MOSFET Power Switches

Nowadays, electronic circuits’ time to market is essential, with engineers trying reduce it as much possible. Due this, simulation has become the main testing concept used in electronics domain. In order perform of a circuit, behavioral model must be created. Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are semiconductor devices found multitude circuits, and they also power switches many applications, such low-dropout linear voltage regulators, switching gate drivers, battery management systems, etc. A MOSFETs’ behavior extremely complex model, thus, creating high-performance models for these transistors an imperative condition emulate exact real circuit using them. An essential parameter MOSFET ON-state resistance (RDSON), because determines losses during ON state. Ideally, need zero. RDSON depends on multiple factors, temperature, load current, gate-to-source voltage. Previous studies this domain focus modeling only specific operating points, but do not cover entire variation range parameters, which critical some applications. For reason, paper, there was introduced first novel technique Power Switches, solves dependency transistor’s variables stated above. The based modulating that value obtained each possible point. method tested real-life example by N-channel transistor chosen environment Oregon, USA, Computer-Aided Design (OrCAD) capture. results show able match characteristics maximum error 0.8%. This important applications temperatures, voltages, currents vary over wide range. new proposed covers gap domain, due fact that, until now, all corners.