A Novel High Holding Voltage ESD device based on SCR and SiGe

As a kind of efficient electrostatic protection device, SCR has been extensively used in on-chip discharge for its strong current ability and favorable internal radiating heat characteristic [1-7] . But there are low holding voltage easy latch up happening two restrictions. A novel high-holding ESD device based on SiGe is proposed this paper. By introducing Ge composition the P + region N-well ordinary SCR, enhanced that gain PNP parasitic transistor reduced then conductivity modulation inhibited. The simulation results TCAD indicate when percentage 30%, new with P+ promotes four times from 2.06V to 10.32V. Therefore, no enlarging layout area structure promoting enhancing anti-latch SCR.