A Novel Density of States (DOS) for Disordered Organic Semiconductors

In this work, we proposed a novel theory of DOS for disordered organic semiconductors based on the frontier orbital and probability statistics. The has been verified by comparing with other alternatives experimental data, mobility calculated is closer to data than traditional DOS. Moreover, also provide detailed method choose parameter better use This paper contains prediction parameters, it data. More importantly, physical meaning explained equilibrium energy transport make model more rational. Compared improved Gaussian exponential DOS, work new attempt combine probabilistic related in semiconductors, showing great significance further investigation properties