A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements
نویسندگان
چکیده
The state-of-the-art technology for gate oxides on SiC involves the introduction of nitrogen to reduce density interface defects. However, metal–oxide–semiconductor (MOS) field-effect transistors still suffer from low channel mobility even after nitridation treatment. Recent reports have indicated that this is due near-interface traps (NITs) communicate with electrons in conduction band via tunneling. In light evidence, it clear conventional trap analysis not appropriate these To address shortcoming, we introduce a new characterization method based conductance–temperature spectroscopy. We present simple equations facilitate comparison different fabrication methods and location NITs give some information about their origin. These techniques can also be applied other MOS structures.
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2021
ISSN: ['1089-7550', '0021-8979', '1520-8850']
DOI: https://doi.org/10.1063/5.0037744