منابع مشابه
Switching dynamics in titanium dioxide memristive devices
Memristive devices are promising components for nanoelectronics with applications in nonvolatile memory and storage, defect-tolerant circuitry, and neuromorphic computing. Bipolar resistive switches based on metal oxides such as TiO2 have been identified as memristive devices primarily based on the “pinched hysteresis loop” that is observed in their current-voltage i-v characteristics. Here we ...
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Memristors have recently generated significant interest due to their potential use in nanoscale logic and memory devices. Of the four passive circuit elements, the memristor (a two-terminal hysteretic switch) has so far proved hard to fabricate out of a single material. Here we employ electromigration to create a reversible passive electrical switch, a memristive device, from a single-component...
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Memristive devices are envisioned to provide new functionalities at the nanoscale based on the possibility to tune their resistivity continuously [1]. Important efforts are still needed to understand the switching mechanism and a physical modeling is still lacking. We proposed here a phenomenological approach to gain insight into the memristive behavior and to address (i) the dynamical switchin...
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Recently, behavioural intelligence of the plasmodia of the true slime mold has been demonstrated. It was shown that a large amoeba-like cell Physarum polycephalum subject to a pattern of periodic environmental changes learns and changes its behaviour in anticipation of the next stimulus to come. Currently, it is not known what specific mechanisms are responsible for such behaviour. Here, we sho...
متن کاملUnipolar memristive Switching in Bulk Negative Temperature Coefficient Thermosensitive Ceramics
A memristive phenomenon was observed in macroscopic bulk negative temperature coefficient nickel monoxide (NiO) ceramic material. Current-voltage characteristics of memristors, pinched hysteretic loops were systematically observed in the Ag/NiO/Ag cell. A thermistor-based model for materials with negative temperature coefficient was proposed to explain the mechanism of the experimental phenomen...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2019
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2019.2918102