A High-Voltage Dual-Gate DMOS Structure (DGDMOS)
نویسندگان
چکیده
منابع مشابه
Adaptive Gate-Level Voltage Scaling Using Dual Voltage Domino Logic
Power consumption is a growing problem in modern digital design, and due to the quadratic relationship between power consumption and supply voltage, significant low-power research has focused on reducing the supply voltage. Adaptive gate-level voltage scaling (AGVS) is a novel design technique which dynamically adjusts the supply voltage at the gate-level to maximize energy efficiency. We propo...
متن کاملHigh-voltage lateral trench gate SOI-LDMOSFETs
We present a lateral trench gate SOI-LDMOSFET that uses narrow trenches as channels. The lateral trench gate, which allows the channel current to flow laterally on the trench side walls, decreases its on-resistance because it increases the current spreading area of the device. The specific on-resistance ðRspÞ strongly depends on the trench depth, which affects the channel area on the side wall ...
متن کاملRobustness improvement of high-voltage IGBT by gate control
This paper considers the turn-off robustness (the maximal current being able to be turned off) of high power IGBTs under over current condition. The analysis of turn-off curves shows that the turn-off robustness of the investigated devices is not really limited by the rate of voltage rise on collector-emitter (dVCE / dt ). The main reason of the robustness limitation is found out to be the rate...
متن کاملAdvanced Gate Drive for the Sns High Voltage Converter Modulator*
SLAC National Accelerator Laboratory is developing a next generation H-bridge switch plate [1], a critical component of the SNS High Voltage Converter Modulator [2]. As part of that effort, a new IGBT gate driver has been developed. The drivers are an integral part of the switch plate, which are essential to ensuring fault-tolerant, high-performance operation of the modulator. The redesigned dr...
متن کاملImpact of Nitrogen (N ) Implantation into Polysilicon Gate on High-Performance Dual-Gate CMOS Transistors
The effect of nitrogen (N14) implant into dual-doped polysilicon gates was investigated. The electrical characteristics of sub-0.25m dual-gate transistors (both pand n-channel), MOS capacitor quasi-static C V curve, SIMS profile, poly-Si gate Rs, and oxide Qbd were compared at different nitrogen dose levels. A nitrogen dose of 5 10 cm 2 is the optimum choice at an implant energy of 40 KeV in te...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: ECS Proceedings Volumes
سال: 1987
ISSN: 0161-6374,2576-1579
DOI: 10.1149/198713.0118pv