A High-Reliability 12T SRAM Radiation-Hardened Cell for Aerospace Applications

The static random-access memory (SRAM) cells used in the high radiation environment of aerospace have become highly vulnerable to single-event effects (SEE). Therefore, a 12T SRAM-hardened circuit (RHB-12T cell) for soft error recovery is proposed using hardening design (RHBD) concept. To verify performance RHB-12T, cell simulated by 28 nm CMOS process and compared with other hardened (Quatro-10T, WE-Quatro-12T, RHM-12T, RHD-12T, RSP-14T). simulation results show that RHB-12T can recover not only from upset caused their sensitive nodes but also multi-node storage node pairs. exhibits 1.14×/1.23×/1.06× shorter read delay than Quatro-10T/WE-Quatro-12T/RSP-14T 1.31×/1.11×/1.18×/1.37× write WE-Quatro-12T/RHM-12T/RHD-12T/RSP-14T. It shows 1.35×/1.11×/1.04× higher stability Quatro-10T/RHM-12T/RHD-12T 1.12×/1.04×/1.09× ability RHM-12T/RHD-12T/RSP-14T. All these improvements are achieved at cost slightly larger area power consumption.