A hierarchy of hydrodynamic models for silicon carbide semiconductors

Nonlinear Models for Silicon Semiconductors

In this paper we present exact closures of the 8-moment and the 9-moment models for the charge transport in silicon semiconductors based on the maximum entropy principle. The validity of these models is assessed by numerical simulations of an n-+n-n+ device. The results are compared with those obtained from the numerical solution of the Boltzmann Transport Equation both by Monte Carlo method an...

a study on thermodynamic models for simulation of 1,3 butadiene purification columns

attempts have been made to study the thermodynamic behavior of 1,3 butadiene purification columns with the aim of retrofitting those columns to more energy efficient separation schemes. 1,3 butadiene is purified in two columns in series through being separated from methyl acetylene and 1,2 butadiene in the first and second column respectively. comparisons have been made among different therm...

A Hierarchy of Hydrodynamic

This paper is a continuation of a series of papers in which (quasi-) hydrodynamic models for plasmas are rigorously derived by means of asymptotic analysis. Here, the quasi-neutral limit (zero-Debye-length limit) in the drift-diiusion equations is performed in the two cases: weakly ionized plasmas and not weakly ionized plasmas. The model consists of the continuity equations for the electrons a...

Silicon Nitride and Silicon Carbide

Porous Silicon Carbide for MEMS

Metal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized to generate locally defined porous areas on single crystalline substrates. Therefore, Platinum (Pt) was sputter deposited on 4H-SiC substrates and patterned with photolithography and lift off. Etching was performed by immersing the Pt coated samples into an etching solution containing sodium persulphate and hy...