A Gold Free Aluminum Metalized GaAs PHEMT With Copper Based Air Bridges and Backside
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چکیده
منابع مشابه
A gold-free fully copper metalized AlGaN/GaN power HEMTs on Si substrate
The thermal stability and reliability of AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrates with a 2 μm-thick copper interconnection (Cu-INTC) metal were evaluated. The use of metallic copper as a conducting metal has the advantages of higher thermal conductivity, low cost and low sheet resistance. For comparison, traditional gold metal interconnection (Au-INTC) devices were ...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2013
ISSN: 2168-6734
DOI: 10.1109/jeds.2014.2300098