A global strain clock multiferroic nanomagnet majority gate based on heterogeneous magnetic layers

In the post-Moore era, nanomagnetic logic circuits have shown great potential to replace complementary metal oxide semiconductor (CMOS) circuits. A majority gate, as core of a circuit, is equivalent inverter in CMOS circuit. gate generally has four nanomagnets arranged “T” shape. The on three corners (<i>I</i><sub>1</sub>, <i>I</i><sub>2</sub>, <i>I</i><sub>3</sub>) are inputs, and middle nanomagnet output (<i>O</i>).<br>This paper proposed based global strain clock heterogeneous multiferroic, utilizing response difference positive negative magnetostrictive coefficient materials (Ni, Terfenol-D) same strain. From bottom top, device mainly composed silicon substrate, piezoelectric layer, elliptical cylindrical nanomagnets. layer's material PMN-PT, input nanomagnets(I1, I2, I3) made Ni, while <i>O</i> Terfenol-D.<br>Besides, two-step calculation mode “high-stress start - low-stress calculation” was designed, that is, first switched “Null” with stress -30Mpa, then reduced -15Mpa, so could realize under coupling <i>I</i><sub>1</sub>, <i>I</i><sub>3</sub>. micromagnetic simulation software Mumax3 adopted simulate performance device. results revealed successfully perform continuous any three-terminal combination. By using mode, accuracy reach 100%, its cycle 2.75 ns, energy consumption about 64aJ. It found change well caused by anisotropy dipole main reason determine magnetization dynamic behavior Therefore, this can provide important guidance for design