A generalized EKV charge-based MOSFET model including oxide and interface traps

This paper presents a generalized EKV charge-based MOSFET model that includes the effects of trapped charges in oxide bulk and at silicon/oxide interface. It is shown presence oxide- interface-trapped charges, mobile charge density can still be linearized but with respect to both surface potential channel voltage. enables us derive closed-form expressions for drain current. These simple formulations demonstrate trapping on characteristics crucial device parameters. The proposed analytical model, including effect velocity saturation, successfully validated through measurements performed devices from 28-nm CMOS technology. Ultrahigh total ionizing doses up 1 Grad(SiO2) are applied generate oxide-trapped activate passivated interface traps. Despite small number parameters, capable accurately capturing measurement results over wide range operation weak strong inversion. Explicit parameters also allow extraction densities.