A CMOS Rectifier Employing Body Biasing Scheme for RF Energy Harvesting

This paper presents a CMOS rectifier for RF energy harvesting. The structure of the proposed design is based on modified cross-coupled architecture. It employs an adaptive body biasing technique to lower transistor threshold voltage (V th ) when PMOS ON. would increase conduction current. Moreover, this increases V OFF. minimize current flowing in reverse bias condition. simulated using 0.18 μm TSMC technology under various loading conditions and input frequency 953 MHz. A peak power conversion efficiency (PCE) 78.2% achieved at -27.5 dBm 100 kΩ load.